A Model for the Drain Current of Deep Submicrometer MOSFET's Including Electron-Velocity Overshoot - Electron Devices, IEEE Transactions on
نویسندگان
چکیده
We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET’s down to 0.07 m channel lengths both at low and room temperatures.
منابع مشابه
An Analytical Model for the Electron Velocity Overshoot Effects in Strained-Si/sub x/ on Si/sub x/Ge - Electron Devices, IEEE Transactions on
We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on SixGe1 x MOSFET’s with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.
متن کاملA Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
متن کاملAnalysis of the Drain Breakdown Mechanism in Thin-Film SOI MOSFET's
One important trend in recent years is the reduction of the silicon film thickness in SOI devices. As results of scaling this parameter several benefits have been obtained such as the elimination of the kink effect, the suppression of short-channel effects, improved subthreshold characteristics, the enhancement of carrier mobility, suppression of punchthrough and drain current overshoot and so ...
متن کاملAnalytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect
Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect Maziar Moradi GaN-based heterostructure field effect transistors (HFETs) have gained considerable attention in high-power microwave applications. So far, unsurpassed current levels and high output power at microwave frequencies have been achie...
متن کاملA New Extraction Algorithm for the Metallurgical Channel Length of Conventional and LDD MOSFET's - Electron Devices, IEEE Transactions on
AbstructA new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET’s is presented, which is based on the well-known resistance method with performing a special technique to eliminate the uncertainty of the channel length as well as to reduce the influence of the parasitic source/drain resistance on threshold-voltage determination. l n particular, the metallur...
متن کامل